SILICON-CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SILICON-CARBIDE SEMICONDUCTOR DEVICE

摘要

The surface layer of a silicon-carbide-substrate base is provided with a p+-type region (3), a p-type region (4), and a p--type region (5). These regions are provided in a voltage-resistant-structure section surrounding an active region, and form the device structure of a Schottky barrier. The p--type region (5) surrounds the p+-type region (3) and the p-type region (4), and configures a junction termination extension (JTE). A Schottky electrode (7) forms an n-type silicon-carbide epitaxial layer (2) and a Schottky barrier. The ends of the Schottky electrode (7) and an electrode pad (8) are positioned in the p+-type region (3), and the end section (7a) of the Schottky electrode (7) protrudes from the end section (8a) of the electrode pad (8). Consequently, the present invention is capable of reducing the size of the voltage-resistant-structure-section region, increasing the size of the active region, and simplifying production.