| 摘要 |
<p>An isolated gate field effect transistor and the manufacture method thereof. Through the method of introducing metal when a dielectric layer (6, 8) is grown on a nitride transistor structure, the chemical properties of the dielectric layer (6, 8) are changed, and the effects of controlling etching speed and depth can be played. A groove structure (H1) is formed in a grid region in a partially thinned manner, and the semi-conductor contact is reserved at the grid, and meanwhile, the groove (H1) is used for forming a field plate structure. Since the surface of a semi-conductor is protected by the dielectric layer (6, 8) during the entire technological process, damage to the surface of nitride, stress releasing and staining on the surface of the nitride can be greatly reduced, and the current collapsing effect of a device can be reduced greatly. Furthermore, since MISFET or MOSFET structure composed of high-quality dielectric layer, current leakage of the grid can be reduced greatly.</p> |
