发明名称 CAPACITOR FOR INTERPOSERS AND METHODS OF MANUFACTURE THEREOF
摘要 Capacitor designs for substrates, such as interposers, and methods of manufacture thereof are disclosed. A through via is formed in the interposer, and a capacitor is formed between a lower level metallization layer and a higher level metallization layer. The capacitor may be, for example, a planar capacitor with dual capacitor dielectric layers.
申请公布号 US2013320493(A1) 申请公布日期 2013.12.05
申请号 US201213485340 申请日期 2012.05.31
申请人 CHANG CHUN HUA;YEH DER-CHYANG;CHENG KUANG-WEI;LIU YUAN-HUNG;HOU SHANG-YUN;CHIOU WEN-CHIH;JENG SHIN-PUU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG CHUN HUA;YEH DER-CHYANG;CHENG KUANG-WEI;LIU YUAN-HUNG;HOU SHANG-YUN;CHIOU WEN-CHIH;JENG SHIN-PUU
分类号 H01L21/02;H01L29/02 主分类号 H01L21/02
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