发明名称 |
CAPACITOR FOR INTERPOSERS AND METHODS OF MANUFACTURE THEREOF |
摘要 |
Capacitor designs for substrates, such as interposers, and methods of manufacture thereof are disclosed. A through via is formed in the interposer, and a capacitor is formed between a lower level metallization layer and a higher level metallization layer. The capacitor may be, for example, a planar capacitor with dual capacitor dielectric layers. |
申请公布号 |
US2013320493(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213485340 |
申请日期 |
2012.05.31 |
申请人 |
CHANG CHUN HUA;YEH DER-CHYANG;CHENG KUANG-WEI;LIU YUAN-HUNG;HOU SHANG-YUN;CHIOU WEN-CHIH;JENG SHIN-PUU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHUN HUA;YEH DER-CHYANG;CHENG KUANG-WEI;LIU YUAN-HUNG;HOU SHANG-YUN;CHIOU WEN-CHIH;JENG SHIN-PUU |
分类号 |
H01L21/02;H01L29/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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