发明名称 |
Epitaxial Base Layers For Heterojunction Bipolar Transistors |
摘要 |
An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the emitter and collector. The base can comprise a plurality of alternating type-I and type-II layers arranged to form a short period super lattice. The type-I layers can have a band-gap that is narrower than the band-gap of the type-II layers. At least one of the type-I layers and the type-II layers can consist essentially of a quaternary material. |
申请公布号 |
US2013320403(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313910710 |
申请日期 |
2013.06.05 |
申请人 |
YODER PAUL DOUGLAS;ISLAM MUNMUN;SATTER MAHBUB D.;GEORGIA TECH RESEARCH CORPORATION |
发明人 |
YODER PAUL DOUGLAS;ISLAM MUNMUN;SATTER MAHBUB D. |
分类号 |
H01L29/737;H01L29/66 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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