ALUMINUM WIRE FOR POWER SEMICONDUCTOR, SEMICONDUCTOR DEVICE USING SAID ALUMINUM WIRE, AND SEARCHING METHOD FOR SAID ALUMINUM WIRE

摘要

Provided are: a bonding Al wire capable of attaining a bonding connection which is more reliable than a conventional bonding connection and which permits a rise in the operation temperature of a power semiconductor device; a semiconductor device using said Al wire; and a searching method for said Al wire. This bonding Al wire consists of an aluminum alloy which exhibits a tangent coefficient (TC) of 300MPa/% or more, preferably 400MPa/% or more in the stress-strain diagram measured in a temperature range of room temperature to 300°C. The tangent coefficient (TC) is a post-yield true stress-true strain slope determined by calculating the ratio (Deltarhot/Deltaepsilont) of true stress difference (Deltarhot) to true strain difference (Deltaepsilont) in the post-yield curve in the diagram. The procedure for selecting an Al alloy exhibiting a tangent coefficient (TC) of 300MPa/% or more is useful as an easy and efficient searching method for a highly reliable bonding Al wire.