摘要 |
<p>A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other.</p> |
申请人 |
SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
发明人 |
KIM, DONGHYUN;KIM, DONG-WOON;KIM, MIKYOUNG;KIM, MINJU;KIM, A-RA;KIM, HYUNJOON;SHUR, JOONG WON;WOO, KWANG-JE;LEE, BOHYUN;JEON, JONGPIL;JUNG, KYUNGSUB |