| 摘要 |
A plasma processing apparatus 11 includes a reactant gas supply unit 13 for supplying a reactant gas for a plasma process into a processing chamber 12. The reactant gas supply unit 13 includes a first reactant gas supply unit 61 provided at a center of a dielectric plate 16 and configured to supply the reactant gas in a directly downward direction toward a central region of a processing target substrate W held on a holding table 14; and a second reactant gas supply unit 62 provided at a position directly above the holding table 14 but not directly above the processing target substrate W held on the holding table 14 and configured to supply the reactant gas toward a center of the processing target substrate W held on the holding table 14. |
