| 摘要 |
<p>AbstractProvided are a polishing pad which remedies the problem of scratchesoccurringwhen a conventional hard (dry.) polishing pad is used, which, is excellent in polishing rate and polishing5 uniformity, and which can be used for not only primary polishing but alsofinishpolishing, and amanufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a. polishing layer havintspolyurethaneurea resin foam contain substantially10 spherical cells, wherein the .iyurethane-poly resin foarl has a. Young's modulus E in a range from. 450 to 30000 kPa, and a density D range from 0.30 tc 0.60 gPcm-.</p> |
