MICROWAVE OVEN AND SEMICONDUCTOR POWER SOURCE FOR MICROWAVE OVEN

摘要

A semiconductor power source (50) of a microwave oven and a microwave oven. The semiconductor power source (50) comprises: a bias voltage and control module (41), a power detection module (42), a power combiner (43), and multiple LDMOS transistors (44, 45, ..., N). Gates of the multiple LDMOS transistors (44, 45, ..., N) are connected to the bias voltage and control module (41) after being connected in parallel, sources of the multiple LDMOS transistors (44, 45, ..., N) are commonly grounded, drains of the multiple LDMOS transistors (44, 45, ..., N) are connected to the power combiner (43) after being connected in parallel, and the multiple LDMOS transistors (44, 45, ..., N) generate microwaves of a preset frequency according to a self-oscillating circuit. The power combiner (43) is used for adjusting output impedance of the multiple LDMOS transistors (44, 45, ..., N). The power detection module (42) is used for detecting reflected power and output power of the semiconductor power source (50) and generating a detection signal and sending the detecting signal to a control system (51) of the microwave oven. The bias voltage and control module (41) is used for providing a bias voltage for the multiple LDMOS transistors (44, 45, ..., N), so as to adjust a heating frequency and an output frequency of the semiconductor power source (50). The semiconductor power source (50) is simple in structure and low in manufacturing cost, and is reliable.