| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can make a surface of a metal electrode arranged on an outermost surface be flat or smooth.SOLUTION: A semiconductor device 1 including an SiC epitaxial layer 3 having an uneven shape which is formed on an outermost surface on which a semiconductor element (MOSFET) is arranged and which is formed based on a height difference H, and a source electrode 13 made of metallic material which is formed on the SiC epitaxial layer 3, comprises a polysilicon layer 12 which has a smoother surface 121 compared with the uneven shape and which is provided between a surface 31 of the SiC epitaxial layer 3 and the source electrode 13. |
