| 摘要 |
Techniques for enhancing energy conversion efficiency in chalcogenide-based photovoltaic devices by improved grain structure and film morphology through addition of urea into a liquid-based precursor are provided. In one aspect, a method of forming a chalcogenide film includes the following steps. Metal chalcogenides are contacted in a liquid medium to form a solution or a dispersion, wherein the metal chalcogenides include a Cu chalcogenide, an M1 and an M2 chalcogenide, and wherein M1 and M2 each include an element selected from the group consisting of: Ag, Mn, Mg, Fe, Co, Cd, Ni, Cr, Zn, Sn, In, Ga, Al, and Ge. At least one organic additive is contacted with the metal chalcogenides in the liquid medium. The solution or the dispersion is deposited onto a substrate to form a layer. The layer is annealed at a temperature, pressure and for a duration sufficient to form the chalcogenide film.
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