| 摘要 |
PROBLEM TO BE SOLVED: To reduce fluctuation in electric characteristics of an inverted staggered thin film transistor by using an oxide semiconductor film containing In, Ga, and Zn because electric characteristics of thin film transistors included in a circuit are important in an active matrix display device and performance of the display device depends on the electric characteristics.SOLUTION: Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness in an overlap with the channel protective film is larger than that in a region in contact with a conductive film. |
