发明名称 Semiconductor memory device, test circuit, and test operation method thereof
摘要 A semiconductor memory device includes a plurality of banks, each including a plurality of first memory cells and a plurality of second memory cells, a first input/output unit configured to transfer first data between the first memory cells and a plurality of first data pads, a second input/output unit configured to transfer second data between the second memory cells and a plurality of second data pads, a path selection unit configured to transfer the first data which are input through the first data pads, to both the first and second memory cells, during a test mode, and a test mode control unit configured to compare the first data of the first and second memory cells, and to control the first data pads to denote a fail status based on a comparison result, during the test mode.
申请公布号 US8595575(B2) 申请公布日期 2013.11.26
申请号 US20100982423 申请日期 2010.12.30
申请人 DO CHANG-HO;KANG BOK-MOON;JUNG TAE-HYUNG;KIM YEON-WOO;HYNIX SEMICONDUCTOR INC. 发明人 DO CHANG-HO;KANG BOK-MOON;JUNG TAE-HYUNG;KIM YEON-WOO
分类号 G01R31/28 主分类号 G01R31/28
代理机构 代理人
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