发明名称 |
Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure |
摘要 |
A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps are formed over the second encapsulant and electrically connect to the plurality of first conductive pillars and the first and second semiconductor die.
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申请公布号 |
US8592975(B2) |
申请公布日期 |
2013.11.26 |
申请号 |
US201213559430 |
申请日期 |
2012.07.26 |
申请人 |
PAGAILA REZA A.;STATS CHIPPAC, LTD. |
发明人 |
PAGAILA REZA A. |
分类号 |
H01L23/48;H01L21/44;H01L21/48;H01L21/50;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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