| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of being manufactured at low cost and reducing reverse leakage current, and the method for manufacturing the same.SOLUTION: A semiconductor device 1 includes: a source region 32 and a drain region 34 sandwiching a body region 31; a source trench 13 reaching the body region 31 through the source region 32; a body contact region 33 formed at a bottom of the source trench 13; a source electrode 28 embedded into the source trench 13; and a gate electrode 24 facing the body region 31. The semiconductor device 1 further includes: a diode region 40; a diode trench 14 formed in a diode region 40; a pn diode region 41 forming a pn junction between itself and the diode region 40 at a bottom of the diode trench 14; and a Schottky electrode 42 Schottky-coupled to the diode region 40 in a side wall 14B of the diode trench 14. |
