发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>The present invention provides a semiconductor device and a method manufacturing the same. The semiconductor device includes a first insulator film arranged on a substrate; a gate electrode arranged on the first insulator film; and a second insulator film including a first discharge site and arranged on the gate electrode and the first insulator film.</p>
申请公布号 KR20130125583(A) 申请公布日期 2013.11.19
申请号 KR20120049216 申请日期 2012.05.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, YONG KUK;CHAE, SEUNG HO;HEO, JUNG SHIK
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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