| 摘要 |
A method for forming an oxide thin film transistor is provided. A gate electrode, a semiconductor insulation layer and a metal oxide layer is sequentially disposed on a substrate. A first patterned photo-resist layer is disposed on the metal oxide layer using a gray-level mask. The first patterned photo-resist layer is used as a mask to etch the metal oxide layer to form a patterned metal oxide layer. A part of the first patterned photo-resist layer is removed to form a second patterned photo-resist layer. A metal layer is formed and a third patterned photo-resist layer is used as a mask to etch the metal layer to form a source region and a drain region and to expose the second patterned photo-resist layer. The third patterned photo-resist layer and a part of second patterned photo-resist layer are removed to form a fourth patterned photo-resist layer.
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