发明名称 |
Methods for forming a contact metal layer in semiconductor devices |
摘要 |
Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
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申请公布号 |
US8586479(B2) |
申请公布日期 |
2013.11.19 |
申请号 |
US201213356002 |
申请日期 |
2012.01.23 |
申请人 |
FU XINYU;GANDIKOTA SRINIVAS;YU SANG HO;SHAH KAVITA;LEI YU;APPLIED MATERIALS, INC. |
发明人 |
FU XINYU;GANDIKOTA SRINIVAS;YU SANG HO;SHAH KAVITA;LEI YU |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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