| 摘要 |
The present invention relates to a plasma enhanced chemical vapor deposition (PECVD) apparatus using large area electron beam. The PECVD apparatus comprises: a vacuum chamber that has an upper electrode formed in the upper part thereof and has a substrate arranged in the lower part thereof; a first high frequency generator that supplies high frequency power to the upper electrode; an electrode beam source that discharges large area electron beam lager than the substrate to the inside of the vacuum chamber; and a process gas supply source that supplies, to the vacuum chamber, process gas to be deposited on the substrate. According to the present invention as the above, the PECVD apparatus is able to form a thin film by depositing oxide, such as a silicon oxide film, an amorphous silicon oxide film, and the like, on a large area glass and a synthetic resin at the low temperatures by having a simply structure and providing the high plasma density through a system constitution that a plasma production method by electron beam and a plasma production method by radio frequency (RF) are combined. Therefore, a thin film is formed without the thermal transformation of a synthetic resin substrate that is used as a flexible substrate, thereby significantly reducing productivity and production costs. [Reference numerals] (50) First high frequency generator;(55) Matching circuit;(AA) Vacuum pump |
