METHOD FOR MANUFACTURING FIELD EMISSION ELECTRON SOURCE

摘要

This method for manufacturing a field emission electron source comprises: a first step wherein a semiconductor layer is formed on one surface side of a first electrode; a second step wherein a porous semiconductor layer is formed by making at least a part of the semiconductor layer porous by means of anodic oxidation; a third step wherein a strong field drift layer is formed by oxidizing or nitriding the porous semiconductor layer; and a fourth step wherein a second electrode is formed on a surface of the strong field drift layer, said surface being on the reverse side of the first electrode-side surface. This method for manufacturing a field emission electron source additionally comprises, after the fourth step, a fifth step wherein the strong field drift layer is cleaned with use of a supercritical fluid.