MAGNETIC MEMORY DEVICE AND DATA WRITING AND READING METHOD WITH RESPECT TO THE SAME

摘要

The disclosed magnetic memory device includes: a first conductive line and a second conductive line which are intersected on a space; a magnetic tunnel junction (MTJ) cell which includes a free layer whose magnetization direction is changed on one side between both ends of the first conductive line; a diode which is arranged in contact with one side between both ends of the second conductive line; and a conductive contact part which connects the MTJ cell to the diode.