| 摘要 |
<p>The present invention addresses the problem of providing a substrate treatment system for making it possible to keep the inside of a chamber at a stable pressure, even when a variance occurs in the supply flow rate of an inert gas, and for making it possible to increase the supply flow rate of the inert gas and reduce the duration of time needed to fill with the inert gas during an initial operation. The present invention adopts a configuration provided with: a substrate treatment section for carrying out a predetermined treatment on the substrate; a chamber for accommodating the substrate treatment section in a sealed state; a gas supply unit for supplying an inert gas to inside the chamber; and a gas exhaust unit for discharging the gas inside the chamber; the supply flow rate of the inert gas of the gas supply unit and the exhaust flow rate of the gas exhaust unit being adjusted so that the pressure inside the chamber reaches a chamber setting pressure higher than the pressure outside the chamber.</p> |
