发明名称 |
Migration and plasma enhanced chemical vapor deposition |
摘要 |
A method of producing a thin film using plasma enhanced chemical vapor deposition, including the steps of supplying a cation species to a substrate region when there is at most a relatively low flux of a plasma based anion species in the substrate region, and supplying the plasma based anion species to the substrate region when there is at most a relatively low flux of the cation species in the substrate region. This enables delivery of gaseous reactants to be separated in time in PECVD and/or RPECVD based film growth systems, which provides a significant reduction in the formation of dust particles for these plasma based film growth techniques.
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申请公布号 |
US8580670(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US20100703713 |
申请日期 |
2010.02.10 |
申请人 |
BUTCHER KENNETH SCOTT ALEXANDER |
发明人 |
BUTCHER KENNETH SCOTT ALEXANDER |
分类号 |
H01L21/28;H01L21/31;H01L21/3205;H01L21/331;H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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