发明名称 INCORPORATING IMPURITIES USING A MASK
摘要 Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating impurities into a material using a mask.
申请公布号 US2013295760(A1) 申请公布日期 2013.11.07
申请号 US201313936724 申请日期 2013.07.08
申请人 MICRON TECHNOLOGY, INC. 发明人 GOSWAMI JAYDEB
分类号 H01L21/28 主分类号 H01L21/28
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