NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having high reliability.SOLUTION: A nonvolatile semiconductor memory device comprises a memory cell array and a data writing section. When word lines adjacent to a selected word line are individually defined as first and second adjacent word lines and any word line other than the selected word line and the first and second adjacent word lines is defined as a first non-selected word line out of a plurality of word lines of the memory cell array, at the time of program operation, the data writing section applies a first passing voltage to at least one of the first and second adjacent word lines and applies a second passing voltage to the first non-selected word line. In a case where a difference between the first passing voltages used in an n-th writing loop and in an (n+1)-th writing loop is represented by &Dgr;Vn and an expression of L