| 摘要 |
Non-volatile memory and a non-volatile memory manufacturing method are disclosed. In one embodiment of the present invention, the non-volatile memory comprises: a deep well formed on a substrate; a first well formed in the deep well region; a second well which is formed in the deep well region and separated from the first well; a first MOSFET formed on the first well; and a second MOSFET formed on the second well. In the embodiment, the non-volatile memory manufacturing method is able to reduce a memory cell area by sharing a well area of a control MOSFET with a control MOSFET of an adjacent memory cell, or a well area of a tunneling MOSFET with a tunneling MOSFET of an adjacent memory cell. Also, in the embodiment, data is recorded or recorded data is deleted only in a selected memory cell of the non-volatile memory, although a well area is shared, by maintaining the voltage of the shared well area and applying source and drain voltages differently from source and drain voltages of an adjacent cell. |
