发明名称 |
Surface treating method and film depositing method |
摘要 |
A surface treating method for treating a surface of a substrate inside a process chamber includes the steps of generating an atmosphere containing no moisture in the process chamber, heating the substrate inside the atmosphere containing no moisture in the process chamber; and causing a reaction between the substrate and an adhesion accelerating agent by feeding the adhesion accelerating agent gas into the process chamber.
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申请公布号 |
US8575039(B2) |
申请公布日期 |
2013.11.05 |
申请号 |
US201213425514 |
申请日期 |
2012.03.21 |
申请人 |
YAMAGUCHI TATSUYA;HASHIMOTO HIROYUKI;TOKYO ELECTRON LIMITED |
发明人 |
YAMAGUCHI TATSUYA;HASHIMOTO HIROYUKI |
分类号 |
H01L21/312 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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