FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME

摘要

Provided is a field effect transistor which includes a drain region, a source region, and a channel region. Provided are a gate electrode which surrounds a part of the channel region and a gate insulation layer which is located between the channel region and the gate electrode. The cross section of the channel region in contact with the source region is smaller than the cross section of the channel region in contact with the drain region.