| 摘要 |
PURPOSE: A backside illumination image sensor and a method for fabricating the same are provided to minimize the interference between adjacent pixels by successively forming a color filter and a lens on the upper part of a first protection layer. CONSTITUTION: A photodiode is defined in an epi layer (304). A deep trench is formed by patterning the epi layer. A first protection layer (312) is formed on the upper part of the epi layer. The first protection layer corresponds to the epi layer. A color filter (318) and a lens (320) are successively formed on the upper part of the first protection layer. |
