发明名称 |
UNIT FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE |
摘要 |
The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed material 11 is such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph. A seed material 12 is such that when a surface layer thereof containing a polycrystalline silicon carbide with a 3C crystal polymorph is subjected to X-ray diffraction, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
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申请公布号 |
US2013285060(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201113995715 |
申请日期 |
2011.06.29 |
申请人 |
TORIMI SATOSHI;NOGAMI SATORU;MATSUMOTO TSUYOSHI;TOYO TANSO CO., LTD. |
发明人 |
TORIMI SATOSHI;NOGAMI SATORU;MATSUMOTO TSUYOSHI |
分类号 |
H01L29/04;H01L21/02;H01L29/16 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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