| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method.SOLUTION: The pattern forming method includes steps of: forming a resist film by applying to a support body, a positive resist composition that generates an acid by exposure and causes increase in the solubility with an alkali developing solution by an action of an acid; exposing the resist film; forming a resist pattern by developing the resist film with an alkali; forming a layer containing a block copolymer having a plurality of types of blocks bonded to one another on the support where the resist pattern is formed, and then inducing phase separation in the layer containing the block copolymer; and selectively removing a phase comprising at least one type of block in the plurality of types of blocks that constitute the block copolymer from the layer containing the block copolymer. |
