| 摘要 |
<p>In a light-emitting element, a nitride semiconductor layer including a light-emitting layer is laminated on a substrate having light transmittance, and a reflection electrode including an Ag layer is laminated on the semiconductor layer. As annealing processing, a first annealing process and a second annealing process are carried out as a pre-process and a post-process, respectively. In the first annealing process, annealing is carried out by means of nitrogen gas, which is an inert gas, serving as an atmosphere gas. In the second annealing process, annealing is carried out with a gas, which includes oxygen gas, serving as an atmosphere gas. By carrying out the annealing processing in two stages, the generation of creases in the Ag layer can be reduced, and surface roughness can be suppressed.</p> |
