发明名称 |
Floating body memory cell having gates favoring different conductivity type regions |
摘要 |
A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.
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申请公布号 |
US8569812(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201213534985 |
申请日期 |
2012.06.27 |
申请人 |
INTEL CORPORATION;CHANG PETER L. D.;AVCI UYGAR E.;KENCKE DAVID L.;BAN IBRAHIM |
发明人 |
CHANG PETER L. D.;AVCI UYGAR E.;KENCKE DAVID L.;BAN IBRAHIM |
分类号 |
H01L29/76;H01L21/00;H01L21/336;H01L21/8234;H01L21/8238;H01L21/84;H01L27/088;H01L29/66 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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