发明名称 |
Techniques for reducing degradation and/or modifying feature size of photomasks |
摘要 |
A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.
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申请公布号 |
US8568959(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US20080244903 |
申请日期 |
2008.10.03 |
申请人 |
BARTLAU PETER H.;FAURE THOMAS B.;WAGNER ALFRED;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BARTLAU PETER H.;FAURE THOMAS B.;WAGNER ALFRED |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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