| 摘要 |
A method for crystallizing amorphous silicon and a method for manufacturing a TFT are provided to improve the yield of products and to enhance image characteristics of a display device by obtaining uniform polycrystalline silicon by heating amorphous silicon with time-variable electric using a conductive material. An amorphous silicon layer(202) is formed on a substrate(201). A conductive material layer(208) is formed on the resultant structure. The amorphous silicon layer is transformed into a polycrystalline silicon layer by performing an inductively heating process on the conductive material. The conductive material is one selected from a group consisting of a metal, a metal alloy or semiconductor. |
