| 摘要 |
PROBLEM TO BE SOLVED: To provide an interlayer filler composition which has adaptability to a process of manufacturing a three-dimensional lamination type semiconductor device, including film-formation property, B stage film formation property, low solubility at junction, or the like, being excellent in performance balance among heat conductivity, heat resistance, or the like.SOLUTION: An interlayer filler composition for a three-dimensional lamination type semiconductor device contains epoxy resin (A) whose viscosity at 150°C is 0.05 Pa s or less. It is preferred that other epoxy resin (B) is contained in addition to the epoxy resin (A) whose viscosity at 150°C is 0.05 Pa s or less, and the ratio of the epoxy resin (A) whose viscosity at 150°C is 0.05 Pa s or less against total epoxy resin in the interlayer filler composition is 75 wt.% or more and 99 wt.% or less. |
