| 发明名称 |
METHOD FOR PRODUCING DOPED THERMOELECTRIC STRUCTURES BASED ON N-PBTE:BI |
| 摘要 |
A method for producing doped thermoelectric structures based on n-PbTe:Bi includes open evaporation in a vacuum, in which starting materials are evaporated from a preliminarily synthesized doped compound n-PbTe:Bi under evaporation temperature T=(970±10) K on the glass-ceramic substrate at T=(470±10) K. As a starting material lead telluride n-PbTe:Bi doped with bismuth with bismuth dopant content of 0.05 at. % is used. |
| 申请公布号 |
UA84495(U) |
申请公布日期 |
2013.10.25 |
| 申请号 |
UA20130004539U |
申请日期 |
2013.04.11 |
| 申请人 |
STATE INSTITUTION OF HIGHER EDUCATION &ldquo,PRYKARPATTIA VASYL SPEPHANYK NATIONAL UNIVERSITY&rdquo, |
发明人 |
FREIK DMYTRO MYKHAILOVYCH;DZUNDZA BOHDAN STEPANOVYCH;YAVORSKYI YAROSLAV SVIATOSLAVOVYCH;KRYNYTSKYI OLEKSANDR STEPANOVYCH |
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