发明名称 |
METHOD FOR FORMING POLYCRYSTALLINE FILM, POLYCRYSTALLINE FILM AND THIN FILM TRANSISTOR FABRICATED FROM THE POLYCRYSTALLINE FILM |
摘要 |
A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.
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申请公布号 |
US2013277677(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
US201213583851 |
申请日期 |
2012.08.02 |
申请人 |
ZHAO LIANFENG;LIANG RENRONG;ZHAO MEI;WANG JING;XU JUN;TSINGHUA UNIVERSITY |
发明人 |
ZHAO LIANFENG;LIANG RENRONG;ZHAO MEI;WANG JING;XU JUN |
分类号 |
H01L29/786;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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