发明名称 METHOD FOR FORMING POLYCRYSTALLINE FILM, POLYCRYSTALLINE FILM AND THIN FILM TRANSISTOR FABRICATED FROM THE POLYCRYSTALLINE FILM
摘要 A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.
申请公布号 US2013277677(A1) 申请公布日期 2013.10.24
申请号 US201213583851 申请日期 2012.08.02
申请人 ZHAO LIANFENG;LIANG RENRONG;ZHAO MEI;WANG JING;XU JUN;TSINGHUA UNIVERSITY 发明人 ZHAO LIANFENG;LIANG RENRONG;ZHAO MEI;WANG JING;XU JUN
分类号 H01L29/786;H01L29/04 主分类号 H01L29/786
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