| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of reducing the size and thickness of a semiconductor device constituting a diode bridge circuit.SOLUTION: Semiconductor chips 2a, 2b, 2c, and 2d are mounted on top surfaces of electrodes 3a, 3b, 3c, and 3d formed by a plating method, respectively. A surface of the semiconductor chip 2a and a top surface of an electrode 4 are connected by a conductive member 5a, a surface of the semiconductor chip 2b and the top surface of the electrode 3a are connected by a conductive member 5b, a surface of the semiconductor chip 2c and the top surface of the electrode 3d are connected by a conductive member 5c, a surface of the semiconductor chip 2d and the top surface of the electrode 4 are connected by a conductive member 5d, and the top surface of the electrode 3b and the top surface of the electrode 3c are connected by a conductive member 5e. Each of rear surfaces of the electrodes 3a, 3b, 3c, and 3d and the electrode 4 are exposed from a resin sealing body. |
