发明名称 |
HIERARCHICAL MEMORY MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) ARCHITECTURE |
摘要 |
<p>A hierarchical memory magnetoresistive random-access memory architecture is disclosed. In a particular embodiment, an apparatus includes a first magnetoresistive random-access memory (MRAM) device corresponding to a first level in a hierarchical memory system. The apparatus includes a second MRAM device corresponding to a second level in the hierarchical memory system. The first MRAM device has a first access latency and includes a first magnetic tunnel junction (MTJ) device having a first physical configuration. The second MRAM device has a second access latency and includes a second MTJ device having a second physical configuration. The first access latency is less than the second access latency.</p> |
申请公布号 |
WO2013158958(A1) |
申请公布日期 |
2013.10.24 |
申请号 |
WO2013US37306 |
申请日期 |
2013.04.19 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
KANG, SEUNG H.;ZHU, XIAOCHUN |
分类号 |
G11C11/16;G06F12/08 |
主分类号 |
G11C11/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|