ZrBO FILM ETCHING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND ZrBO FILM ETCHING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a ZrBO film etching method which can etching a ZrBO film, and provide a semiconductor device manufacturing method and a ZrBO film etching apparatus.SOLUTION: A semiconductor substrate comprises: a base material S having an upper side silicon substrate 43, in which a through hole H for forming an electrode piercing the upper side silicon substrate 43 is formed; and a ZrBO film 46 formed on an internal surface of the through hole H. A ZrBO film etching method comprises the step of supplying plasma generated from halogen-containing gas including fluorine-containing gas and non-fluorine halogen-containing gas to the ZrBO film 46. As a result, a bottom face ZrBO film 46b formed at least on a bottom face Hb of the through hole H is etched.