| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method of a semiconductor DBR which has high uniformity and good characteristics.SOLUTION: A surface emitting laser manufacturing method comprises: a laminate deposition process of alternately laminating on a substrate under a first deposition condition, one or more pairs of low refractive index layers each having an optical film thickness of λ/4 and over and high refractive index layers of first semiconductor films each having a bandgap smaller than a DBR design wavelength; a measuring step of irradiating light on the laminate to obtain a film thickness distribution from reflected light; a deposition step of depositing on the first semiconductor film under a second deposition condition which makes an in-plane distribution be more uniform than under the first deposition condition, a second semiconductor film having a bandgap smaller then the DBR design wavelength and an optical film thickness of λ/4; a measuring process of irradiating the second semiconductor film with light to measure a film thickness distribution from reflected light; a deposition process of depositing on the second semiconductor layer, a third semiconductor film having a bandgap smaller than the DBR design wavelength so as to make a total of optical film thicknesses of the first, second and third semiconductor films be 3λ/4 and over; and a process of alternately laminating high refractive layers of a semiconductor material and low refractive layers of a semiconductor material on the third semiconductor film. |
