发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM |
摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device, a method for processing a substrate, a substrate processing apparatus and a recording medium are provided to improve freedom of choice by forming a thin film including an element like silicon in a low temperature region. CONSTITUTION: A first raw material supply system (232a) supplies a first raw material. The first raw material includes an element and a halogen group. A second raw material supply system (232b) supplies a second raw material. The second raw material includes an element and an amino group. A reducing agent supply system supplies halogen, nitrogen, and a carbon-free reducing agent.</p> |
申请公布号 |
KR20130116173(A) |
申请公布日期 |
2013.10.23 |
申请号 |
KR20130032340 |
申请日期 |
2013.03.26 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
SANO ATSUSHI;HIROSE YOSHIRO |
分类号 |
H01L21/318;H01L21/205 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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