发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
摘要 <p>PURPOSE: A method for manufacturing a semiconductor device, a method for processing a substrate, a substrate processing apparatus and a recording medium are provided to improve freedom of choice by forming a thin film including an element like silicon in a low temperature region. CONSTITUTION: A first raw material supply system (232a) supplies a first raw material. The first raw material includes an element and a halogen group. A second raw material supply system (232b) supplies a second raw material. The second raw material includes an element and an amino group. A reducing agent supply system supplies halogen, nitrogen, and a carbon-free reducing agent.</p>
申请公布号 KR20130116173(A) 申请公布日期 2013.10.23
申请号 KR20130032340 申请日期 2013.03.26
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SANO ATSUSHI;HIROSE YOSHIRO
分类号 H01L21/318;H01L21/205 主分类号 H01L21/318
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