发明名称 Method and apparatus for atomic layer deposition
摘要 A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.
申请公布号 US8562743(B2) 申请公布日期 2013.10.22
申请号 US201113098991 申请日期 2011.05.02
申请人 STRANG ERIC J.;TOKYO ELECTRON LIMITED 发明人 STRANG ERIC J.
分类号 C23C16/00;C23F1/00;H01L21/306 主分类号 C23C16/00
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