发明名称 |
Method and apparatus for atomic layer deposition |
摘要 |
A high pressure processing system including a chamber configured to house a substrate. A fluid introduction system includes at least one composition supply system configured to supply a first composition and a second composition, and at least one fluid supply system configured to supply a fluid. The fluid supply system is configured to alternately and discontinuously introduce the first composition and the second composition to the chamber within the fluid.
|
申请公布号 |
US8562743(B2) |
申请公布日期 |
2013.10.22 |
申请号 |
US201113098991 |
申请日期 |
2011.05.02 |
申请人 |
STRANG ERIC J.;TOKYO ELECTRON LIMITED |
发明人 |
STRANG ERIC J. |
分类号 |
C23C16/00;C23F1/00;H01L21/306 |
主分类号 |
C23C16/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|