METHODS OF MANUFACTURING VERTICAL MEMORY DEVICES

摘要

PURPOSE: A method for manufacturing a vertical memory device is provided to easily perform a semiconductor pattern formation process by extending the inlet of an opening part. CONSTITUTION: An opening part having an expanded inlet is formed. A charge trapping pattern (116a) and an insulating layer pattern (118a) are formed on the sidewall of the opening part. A channel layer is formed in the opening part. The channel layer is electrically connected to a semiconductor substrate. Memory cells and the gate electrodes of a selection transistor are formed on the lateral surface of the channel layer.