发明名称 |
APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An apparatus and method for manufacturing a semiconductor device are provided to increase the uniformity of a temperature by directly heating a substrate with infrared rays. CONSTITUTION: A wafer carrier (15) is prepared. A substrate (S) is mounted on the wafer carrier. A heating unit (17) is arranged on the lower surface of the wafer carrier. The heating unit heats the substrate with infrared rays. A nitride thin film is grown on the substrate. |
申请公布号 |
KR20130115024(A) |
申请公布日期 |
2013.10.21 |
申请号 |
KR20120037557 |
申请日期 |
2012.04.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUN YOUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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