发明名称 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: An apparatus and method for manufacturing a semiconductor device are provided to increase the uniformity of a temperature by directly heating a substrate with infrared rays. CONSTITUTION: A wafer carrier (15) is prepared. A substrate (S) is mounted on the wafer carrier. A heating unit (17) is arranged on the lower surface of the wafer carrier. The heating unit heats the substrate with infrared rays. A nitride thin film is grown on the substrate.
申请公布号 KR20130115024(A) 申请公布日期 2013.10.21
申请号 KR20120037557 申请日期 2012.04.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JUN YOUN
分类号 H01L21/20 主分类号 H01L21/20
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