| 摘要 |
PROBLEM TO BE SOLVED: To form a low-resistance tungsten film without deteriorating adhesion with an underlying film or electrical characteristics.SOLUTION: When forming a tungsten film on a surface of a substrate while heating the substrate in a depressurized atmosphere, an initial tungsten film is formed on the surface of the substrate by alternately repeating the supply of a WFgas which is tungsten raw material and the supply of a Hgas which is a reducing gas, while conducting purge therebetween, a gas containing a material for nucleation is adsorbed onto a surface of the initial tungsten film, the WFgas which is the tungsten raw material and the Hgas which is the reducing gas are supplied, and a crystallinity blocking tungsten film for blocking crystallinity of the initial tungsten film is formed. Thereafter, after elevating a pressure inside a process container, a flow rate of the WFgas is increased, the WFgas and the Hgas are supplied, and a main tungsten film is formed. |
