| 摘要 |
A gate voltage generator which supplies first gate voltage at erase verify time to a first selected word line to which a first memory cell included in N memory cells is connected, which supplies the first gate voltage at the erase verify time to a second selected word line to which a first reference cell included in M reference cells is connected, which supplies second gate voltage at the erase verify time to a first non-selected word line connected to a memory cell array, and which supplies third gate voltage at the erase verify time to a second non-selected word line connected to a reference cell array is included. An electric current which flows through a reference cell connected to the second non-selected word line is stronger than an electric current which flows through a memory cell connected to the first non-selected word line. |
