SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a SiC semiconductor device including a semiconductor switching element which has a structure capable of relaxing field concentration to a greater extent.SOLUTION: In a silicon carbide semiconductor device, a p type deep layer 9 formed to a depth deeper than a trench 6 has a taper-shape tip. Accordingly, when breakdown occurs, the breakdown is caused to occur at the tip position of the p type deep layer 9 not at a bottom of a gate insulation film 7 thereby to make it possible to prevent breakage of the gate insulation film 7.