| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlayer film, from which a resist underlayer film excellent in coating defect suppressing property and storage stability can be formed.SOLUTION: The composition for forming a resist underlayer film comprises [A] a polysiloxane and [B] a solvent. The [B] solvent includes [B1] an organic solvent having a boiling point of 150.0°C or higher and [B2] water, in which the content of the [B1] organic solvent is 1 mass% or more and 50 mass% or less with respect to the total amount of the [B] solvent, and the content of [B2] water is 1 mass% or more and 30 mass% or less with respect to the total amount of the [B] solvent. The [B1] organic solvent preferably has a boiling point of 180°C or higher. The [B1] organic solvent preferably has a relative dielectric constant of 13 or more and 200 or less. |
